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| inchange semiconductor product specification silicon npn power transistors 2SD2401 description ? ? with mt-200 package ? complement to type 2sb1570 ? darlington applications ? audio, series regulator and general purpose applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i b base current 1 a p c collector power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (mt-200) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2401 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma; i b =0 150 v v cesat collector-emitter saturation voltage i c =7 a;i b =7m a 2.5 v v besat base-emitter saturation voltage i c =7 a;i b =7m a 3.0 v i cbo collector cut-off current v cb =160v; i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe dc current gain i c =7a ; v ce =4v 5000 f t transition frequency i c =2a ; v ce =12v 55 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 95 pf switching times t on turn-on time 0.5 | s t s storage time 10.0 | s t f fall time i c =7a;r l =10 |? i b1 =- i b2 =7ma v cc =70v 1.1 | s ? h fe classifications o p y 5000-12000 6500-20000 15000-30000 inchange semiconductor product specification 3 silicon npn power transistors 2SD2401 package outline fig.2 outline dimensions |
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